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Post-annealing effect upon electrical and optical properties of MOVPE grown P-doped ZnTe homoepitaxial layers

✍ Scribed by Katsuhiko Saito; Kouji Yamaguchi; Tooru Tanaka; Mitsuhiro Nishio; Qixin Guo; Hiroshi Ogawa

No coin nor oath required. For personal study only.

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