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The growth of Cr-doped GaN by MOVPE towards spintronic applications

✍ Scribed by Cho, Y. S. ;Kaluza, N. ;Guzenko, V. ;Schäpers, Th. ;Hardtdegen, H. ;Bochem, H.-P. ;Breuer, U. ;Ghadimi, M. R. ;Fecioru-Morariu, M. ;Beschoten, B. ;Lüth, H.

Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
865 KB
Volume
204
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

This paper reports on the growth of Cr‐doped GaN layers by metal organic vapor phase epitaxy (MOVPE) and their characterization for possible spintronic applications. We have used bis (cyclopentadienyl)chromium (Cp~2~Cr) to intentionally incorporate chromium (Cr) during GaN layer growth. The effects of the carrier gas, hardware setup, and growth temperature on the growth of Cr‐doped GaN were investigated. A linear dependence between mole fraction of Cp~2~Cr in the gas phase and incorporated Cr in the solid phase was found. The surface morphology was mostly influenced by carrier gas and growth temperature. A remanent magnetization was observed even above room temperature. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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