Synthesis and impurity doping of GaN powders by the two-stage vapor-phase method for phosphor applications
✍ Scribed by Hara, K. ;Okuyama, E. ;Yonemura, A. ;Uchida, T. ;Okamoto, N.
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 258 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
The analysis of particle formation and the doping of luminescent impurities during the two‐stage vapor‐phase synthesis of GaN powder were carried. GaN particles were grown very fast during the second stage of this method, and the increment in particle size was larger for higher reaction temperature in the region between 800 and 1000 °C. The analysis on the behaviour of particle growth based on the reaction kinetics suggested that the growth almost finishes in a few seconds with an extremely high rate at the early stage at 1000 °C, whereas the growth lasts with relatively low rates for a time longer than the actual growth duration for the case of lower temperature synthesis. GaN powders doped with various impurity atoms were synthesized by supplying impurity sources with GaCl during the second stage. The samples doped with Zn, Mg and Tb showed emissions characteristic for each doped impurity. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)