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Growth and characterization of heavily selenium doped GaAs using MOVPE

โœ Scribed by A. Maassdorf; M. Hoffmann; M. Weyers


Book ID
108166154
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
435 KB
Volume
315
Category
Article
ISSN
0022-0248

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Growth and characterization of heavily d
โœ R. Scala; M. Porrini; G. Borionetti ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 298 KB ๐Ÿ‘ 1 views

## Abstract Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market