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MOMBE growth and characterization of heavily carbon-doped InGaAs

✍ Scribed by Takumi Yamada; Shinji Nozaki; Ryuji Miyake; Taichi Fukamachi; Jun-ichi Shirakashi; Makoto Konagai; Kiyoshi Takahashi

Book ID
107791869
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
446 KB
Volume
111
Category
Article
ISSN
0022-0248

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## Abstract Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market