## Abstract We demonstrated activation annealing of Mgβdoped pβtype Al~0.17~Ga~0.83~N in different gases. The hole concentration of Al~0.17~Ga~0.83~N annealed in oxygen is higher than that annealed in nitrogen or air. A hole concentration of 1.3βΓβ10^16^βcm^β3^ at room temperature was achieved by a
β¦ LIBER β¦
Activation of Mg-doped P-GaN by using two-step annealing
β Scribed by Jun-Dar Hwang; Gwo-Huei Yang
- Book ID
- 103818605
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 279 KB
- Volume
- 253
- Category
- Article
- ISSN
- 0169-4332
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