𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

✍ Scribed by R. Niebuhr; K. H. Bachem; U. Kaufmann; M. Maier; C. Merz; B. Santic; P. Schlotter; H. Jürgensen


Book ID
107457434
Publisher
Springer US
Year
1997
Tongue
English
Weight
107 KB
Volume
26
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Material properties of GaN grown by MOCV
✍ Liu, Wei; Li, Ming-Fu; Feng, Zhe-Chuan; Chua, Soo-Jin; Akutsu, Nakao; Matsumoto, 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 150 KB 👁 2 views

n-Type GaN thin films grown by metal-organic chemical vapour deposition (MOCVD) were studied using photoluminescence (PL), photoreflectance (PR) and Raman scattering. In the PL spectra, the peak position of the band-edge transition shifts to the red side monotonically with increasing doping concentr

Electrical properties of chlorine-doped
✍ Chikoidze, E. ;Modreanu, M. ;Sallet, V. ;Gorochov, O. ;Galtier, P. 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 299 KB

## Abstract Chlorine‐doped ZnO thin films were grown by MOCVD on sapphire and fused silica. Chlorine is incorporated in substitution for oxygen and acts as a donor, leading to an increase of electron concentration. Transport properties were studied for samples with different chlorine content. Hall