Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O
✍ Scribed by R. Niebuhr; K. H. Bachem; U. Kaufmann; M. Maier; C. Merz; B. Santic; P. Schlotter; H. Jürgensen
- Book ID
- 107457434
- Publisher
- Springer US
- Year
- 1997
- Tongue
- English
- Weight
- 107 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0361-5235
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n-Type GaN thin films grown by metal-organic chemical vapour deposition (MOCVD) were studied using photoluminescence (PL), photoreflectance (PR) and Raman scattering. In the PL spectra, the peak position of the band-edge transition shifts to the red side monotonically with increasing doping concentr
## Abstract Chlorine‐doped ZnO thin films were grown by MOCVD on sapphire and fused silica. Chlorine is incorporated in substitution for oxygen and acts as a donor, leading to an increase of electron concentration. Transport properties were studied for samples with different chlorine content. Hall