The Effect of Growth Pressure and Growth Rate on the Properties of Mg-Doped GaN
β Scribed by Fu, Binglei; Liu, Naixin; Zhang, Ning; Si, Zhao; Wei, Xuecheng; Wang, Xiaodong; Lu, Hongxi; Liu, Zhe; Wei, Tongbo; Yi, Xiaoyan; Li, Jinmin; Wang, Junxi
- Book ID
- 121567860
- Publisher
- Springer US
- Year
- 2014
- Tongue
- English
- Weight
- 474 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0361-5235
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
The influence of growth pressure on the properties of p-GaN grown by metal-organic chemical vapor deposition method was investigated. The p-GaN layers were grown at low temperature under growth pressures ranging from 100 to 400 mbar. We find that higher growth pressure leads to lower Mg incorporatio
## Abstract The performance of IIIβV nitride heterostructure bipolar transistors has been limited by highly resistive pβtype layers, in addition to difficulties associated with a precise pβn junction placement at the emitterβbase heterojunction due to the Mgβmemory effect during growth by MetalβOrg