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Effect of growth pressure on the morphology evolution and doping characteristics in nonpolar a-plane GaN

✍ Scribed by Keun Man Song; Jong Min Kim; Bong Kyun Kang; Chan Soo Shin; Chul Gi Ko; Bo Hyun Kong; Hyung Koun Cho; Dae Ho Yoon; Hogyoung Kim; Sung Min Hwang

Book ID
116244881
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
854 KB
Volume
258
Category
Article
ISSN
0169-4332

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## Abstract AlN doped SiC films were deposited on on‐axis Si‐face 4H‐SiC (0001) substrates by the physical vapor transport (PVT) method. Thick film in the range of 20 ΞΌm range was grown and morphology was characterized. Films were grown by physical vapor deposition (PVD) in a vertical geometry in t