The influence of growth pressure on the properties of p-GaN grown by metal-organic chemical vapor deposition method was investigated. The p-GaN layers were grown at low temperature under growth pressures ranging from 100 to 400 mbar. We find that higher growth pressure leads to lower Mg incorporatio
Effect of reactor pressure on the growth rate and structural properties of GaN films
β Scribed by Ni, JinYu ;Hao, Yue ;Zhang, JinCheng ;Yang, LinAn
- Book ID
- 107371701
- Publisher
- Elsevier
- Year
- 2009
- Tongue
- English
- Weight
- 579 KB
- Volume
- 54
- Category
- Article
- ISSN
- 2095-9273
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