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Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures

✍ Scribed by K. Jacobs; B.Van Daele; M.R. Leys; I. Moerman; G.Van Tendeloo

Book ID
108341744
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
411 KB
Volume
248
Category
Article
ISSN
0022-0248

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Effect of lateral vapor phase diffusion
Effect of lateral vapor phase diffusion during the selective growth of InGaN/GaN MQW on semipolar and nonpolar GaN stripes
✍ Tanikawa, Tomoyuki ;Honda, Yoshio ;Yamaguchi, Masahito ;Amano, Hiroshi πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 416 KB

## Abstract We investigated the InGaN/GaN multiple quantum well (MQW) thickness and cathode luminescence (CL) distribution on nonpolar (11–20)GaN, semipolar (11–22)GaN, and (1–101)GaN microstripes grown by selective metal‐organic vapor phase epitaxy (MOVPE) on patterned Si substrates. All samples e