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Effects of growth interruption on the properties of InGaN/GaN MQWs grown by MOCVD

โœ Scribed by Nan-hui Niu; Huai-bing Wang; Jian-ping Liu; Nai-xin Liu; Yan-hui Xing; Jun Han; Jun Deng; Guang-di Shen


Book ID
107509314
Publisher
Tianjin University of Technology
Year
2007
Tongue
English
Weight
152 KB
Volume
3
Category
Article
ISSN
1673-1905

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Influence of the TEGa flow on the optica
โœ Shanjin Huang; Bingfeng Fan; Yulun Xian; Zhiyuan Zheng; Zhisheng Wu; Hao Jiang; ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 789 KB

We have investigated the influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells (MQWs) with an indium composition around 20%. The samples with five-pairs InGaN/GaN MQWs were grown on sapphire substrates by metalorganic chemical vapor deposition. Photo