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Substrate effects on the structure and optical properties of GaN epitaxial films

โœ Scribed by U. Kaiser; A. N. Gruzintsev; I. I. Rhodos; W. Richter

Book ID
110666692
Publisher
SP MAIK Nauka/Interperiodica
Year
2000
Tongue
English
Weight
990 KB
Volume
36
Category
Article
ISSN
0020-1685

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Infrared reflectance studies of GaN epitaxial films on sapphire substrate
โœ Feng, Z. C.; Hou, Y. T.; Chua, S. J.; Li, M. F. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 107 KB ๐Ÿ‘ 2 views

Infrared reflectivity measurements were performed on undoped and Si-doped GaN films grown on sapphire. After analysing the substrate reflectance accurately, a good fit to the measured reflectance has been achieved. By comparison of the measured and calculated spectra, it becomes possible to identify