✦ LIBER ✦

Optical parameters of epitaxial GaN thin film on Si substrate from the reflection spectrum

✍ Scribed by A.M. El-Naggar; S.Y. El-Zaiat; Saleh M. Hassan

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 306 KB
Volume: 41
Category: Article
ISSN: 0030-3992
DOI: 10.1016/j.optlastec.2008.05.022

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effects of substrate cleaning and film t

Effects of substrate cleaning and film thickness on the epitaxial growth of ultrahigh vacuum deposited Cu thin films on (001)Si

✍ C.S. Liu; L.J. Chen 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 334 KB

The formation of epitaxial CoSi2 thin fi

The formation of epitaxial CoSi2 thin films on (001) Si from amorphous Co-W alloys

✍ A.H. Reader; J.P.W.B. Duchateau; J.E. Crombeen; E.P. Naburgh; M.A.J. Somers 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 922 KB

Effect of growth parameters on the struc

Effect of growth parameters on the structure and magnetic properties of thin polycrystalline Fe films fabricated on Si〈1 0 0〉 substrates

✍ A. Javed; N.A. Morley; M.R.J. Gibbs 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 757 KB

Interface Controlled Materials (RUEHLE:I

Interface Controlled Materials (RUEHLE:INTERFACE CONT.MAT O-BK) || Influence of Growth Parameters on the Electrical and Optical Properties of Ge x Si y O z Sputtered Thin Films

✍ RÃ¼hle, M.; Gleiter, H. 📂 Article 📅 2005 🏛 Wiley-VCH Verlag GmbH & Co. KGaA ⚖ 121 KB 👁 2 views

Optical properties of Pb(Zr0.53Ti0.47)O3

Optical properties of Pb(Zr0.53Ti0.47)O3 thin films on Pt-coated Si substrates measured by spectroscopic ellipsometry in the UV–vis–NIR region

✍ Y.P. Jiang; X.G. Tang; Q.X. Liu; Q. Li; A.L. Ding 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 740 KB

Pb(Zr 0.53 Ti 0.47 )O 3 (PZT) thin films grown on Pt-coated Si substrates were prepared by a sol-gel process. Crystalline structure characterisation and optical constants (refractive index n, extinction coefficient k) and bandgaps E g of PZT thin films annealed at 550, 600 and 650 • C were obtained