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Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric

โœ Scribed by C.X. Li; C.H. Leung; P.T. Lai; J.P. Xu

Book ID
108271788
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
517 KB
Volume
54
Category
Article
ISSN
0038-1101

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๐Ÿ“œ SIMILAR VOLUMES

A study on fluorine incorporation in Ge
A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric
โœ C.X. Li; C.D. Wang; C.H. Leung; P.T. Lai; J.P. Xu ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 374 KB

In this work, Ge p-MOS capacitors with HfTiON dielectric were fabricated. Fluorine was incorporated by post-deposition plasma annealing or pre-deposition plasma treatment. Experimental results showed that fluorine could result in lower interface-state density, smaller frequency dispersion and better