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A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric

✍ Scribed by C.X. Li; C.D. Wang; C.H. Leung; P.T. Lai; J.P. Xu

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 374 KB
Volume: 86
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2009.03.022

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✦ Synopsis

In this work, Ge p-MOS capacitors with HfTiON dielectric were fabricated. Fluorine was incorporated by post-deposition plasma annealing or pre-deposition plasma treatment. Experimental results showed that fluorine could result in lower interface-state density, smaller frequency dispersion and better high-field reliability, with the former method better than the latter.