✦ LIBER ✦
Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric
✍ Scribed by C.X. Li; X. Zou; P.T. Lai; J.P. Xu; C.L. Chan
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 681 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0026-2714
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