Effects of deposition parameters on the synthesis of Nb3Ge in the CVD process

✍ Scribed by T. Asano; Y. Tanaka; K. Tachikawa

• Publisher: Elsevier Science
• Year: 1985
• Tongue: English
• Weight: 300 KB
• Volume: 25
• Category: Article
• ISSN: 0011-2275
• DOI: 10.1016/0011-2275(85)90073-6

✦ Synopsis

The eHects ol cle,,posili(.;n parameters; cm the synthesis ol Nb:.~Ge on the chemical vapour clepositi(in process have been studied. The chlorides, NbCI 5 and GeCI 4, prepared by m sttu chlorlnallun were used The NL~Ge him wa~ depuslled orl a Haslelluy X lal:)e which muved Ihrough a lubular reacllon lurnac:e and was I-lealed by dlre~:l currenl Joule healing Fnlm deposlllon was c,-~rrled oul under carelully c.orllrcllled ~:ondlli~ns; in particular, temperalure dl=:,lrlhullorl ol Ihe rea~.:llve gas alorlg Hs Ilow and Ihal ol Ihe subslrale lape irl Ihe Iorlglludlrlal d~recllon were accuralely conlrolled. Most ol the hlms prepared were composed ol A15 Nb-~Ge compound wllh a small quanl~ly ol hexagonal and/"or lelragunal Nbr, Gej phases Th~l.,:.;e hlms =:~howed onsel T, ol .::20 K Uruh.)rrn hires in layer Ihl~;knes,~, compound ~-omposlllons, and super~:ondu~:llng ethical lemperalure were clblatrled with good reprodu(',tbthly by precise L:onlrol ol Ihe ('lepo=stli~lrl parameters.