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Microwave Plasma CVD in the System Si-C-H-Ar: Effect of Process Parameters

✍ Scribed by Dr. Stephane Scordo; Prof. Michel Ducarroir; Dr. René Berjoan; Dr. Jean Louis Jauberteau

Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
924 KB
Volume
3
Category
Article
ISSN
0948-1907

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## Abstract In the present work are presented the results of the thermodynamic analysis of the interaction processes in the system Si‐C‐H‐Cl in the temperature interval 1000‐3000 K. The equilibrium pressures of the components in the system Si‐C‐H‐Cl with taking account the formation of the condense