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ChemInform Abstract: Microwave Plasma CVD in the System Si-C-H-Ar: Effect of Process Parameters.

✍ Scribed by S. SCORDO; M. DUCARROIR; R. BERJOAN; J. L. JAUBERTEAU

Publisher: John Wiley and Sons
Year: 2010
Weight: 29 KB
Volume: 28
Category: Article
ISSN: 0931-7597
DOI: 10.1002/chin.199731038

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✦ Synopsis

The effects of temp., gas flow rate, power, and pressure on the composition and rate of Si-C films formed on a steel substrate by microwave plasma CVD from Ar-diluted Me4Si is studied using a microwave device in which the substrate temp. and plasma power are separately adjustable. Deposition rates of 3-60 µmh-1 and Si/C ratios ranging from 0.3 to 0.7 are achieved for all conditions tested. At a constant Si/C ratio the film hardness can be increased by either addition of H2 to the feed gas or by a slight increase of the temp., which both reduce the H-bonds in the film. Addition of SiH4 increases the Si/C ratio to 1.7 but lowers the film hardness.

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