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The influence of deposition parameters on the growth of a-SiGe:H alloys in a plasma CVD system

✍ Scribed by M. Zeman; I. Ferreira; M.J. Geerts; J.W. Metselaar


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
386 KB
Volume
46
Category
Article
ISSN
0169-4332

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The effects of temp., gas flow rate, power, and pressure on the composition and rate of Si-C films formed on a steel substrate by microwave plasma CVD from Ar-diluted Me4Si is studied using a microwave device in which the substrate temp. and plasma power are separately adjustable. Deposition rates o