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Effects of co-sputtering powers on the properties of silicon-incorporated zinc oxide used as a channel layer of thin film transistors

✍ Scribed by Lee, Sang-Hyuk; Kim, Won; Park, Jin-Seok


Book ID
122240550
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
848 KB
Volume
549
Category
Article
ISSN
0040-6090

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Influence of the channel layer thickness
✍ Ai Hua Chen; Hong Tao Cao; Hai Zhong Zhang; Ling Yan Liang; Zhi Min Liu; Zheng Y πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 751 KB

Thin-film transistors (TFTs) were fabricated on SiO 2 /n + -Si substrates using amorphous binary In 2 O 3 -ZnO (a-IZO) films with different thickness for active channel layers deposited by the rf magnetron sputtering at room temperature. The performance of devices was found to be thickness dependent