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Effect of the postimplantation-annealing temperature on the properties of silicon light-emitting diodes fabricated through boron ion implantation inton-Si

✍ Scribed by N. A. Sobolev; A. M. Emel’yanov; E. I. Shek; V. I. Vdovin

Book ID: 110137592
Publisher: SP MAIK Nauka/Interperiodica
Year: 2004
Tongue: English
Weight: 224 KB
Volume: 46
Category: Article
ISSN: 1063-7834
DOI: 10.1134/1.1641916

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