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MBE-grown Si: Er light-emitting structures: Effect of implantation and annealing on the luminescence properties

✍ Scribed by N. A. Sobolev; D. V. Denisov; A. M. Emel’yanov; E. I. Shek; E. O. Parshin

Book ID
110140963
Publisher
SP MAIK Nauka/Interperiodica
Year
2005
Tongue
English
Weight
53 KB
Volume
47
Category
Article
ISSN
1063-7834

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The influence of the p-n junction breakdown mechanism on the Er 3+ electroluminescence (EL) intensity and excitation efficiency (an intra 4f transition 4 I 13/2 → 4 I 15/2 of Er 3+ ion at the wavelength of 1.54 m) has been investigated in Si:Er light emitting diodes (LED) grown with sublimation mole