𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices

✍ Scribed by L. Trojman; L.-Å. Ragnarsson; L. Pantisano; G.S. Lujan; M. Houssa; T. Schram; F. Cubaynes; M. Schaekers; A. Van Ammel; G. Groeseneken; S. De Gendt; M. Heyns

Book ID
108207487
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
231 KB
Volume
80
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A novel approach for determining the eff
A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices
✍ C.L Hinkle; C Fulton; R.J Nemanich; G Lucovsky 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 224 KB

There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth ox