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Effect of rapid thermal annealing on oxide precipitation behavior in silicon crystal

โœ Scribed by M Akatsuka; M Okui; K Sueoka

Book ID
114165234
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
897 KB
Volume
186
Category
Article
ISSN
0168-583X

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## Abstract In this paper, the effects of vacancies introduced by rapid thermal processing (RTP) on nucleation and growth of oxide precipitates in Czochralski (Cz) silicon are elucidated. Moreover, the nitrogen and vacancy enhancement roles in oxide precipitation are differentiated through designin