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Effect of rapid thermal annealing on anodic oxides on InP

✍ Scribed by Eftekhari, G.


Publisher
John Wiley and Sons
Year
1990
Tongue
English
Weight
399 KB
Volume
121
Category
Article
ISSN
0031-8965

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## Abstract The effects of rapid thermal annealing on the electrical and structural properties of Ru/n‐InP Schottky diode have been investigated by current–voltage (__I__–__V__), capacitance–voltage (__C__–__V__), X‐ray diffraction (XRD) and secondary ion‐mass spectroscopy (SIMS) techniques. Result