𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The effect of rapid thermal annealing on the electrical characteristics of InP MOS structures with a double oxide layer

✍ Scribed by Eftekhari, G.

Publisher
John Wiley and Sons
Year
1995
Tongue
English
Weight
317 KB
Volume
152
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Effect of rapid thermal annealing on the
Effect of rapid thermal annealing on the electrical and structural properties of Ru/n-InP (100) Schottky rectifiers
✍ Janardhanam, V. ;Kumar, A. Ashok ;Reddy, M. Bhaskar ;Reddy, V. Rajagopal ;Reddy, πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 817 KB

## Abstract The effects of rapid thermal annealing on the electrical and structural properties of Ru/n‐InP Schottky diode have been investigated by current–voltage (__I__–__V__), capacitance–voltage (__C__–__V__), X‐ray diffraction (XRD) and secondary ion‐mass spectroscopy (SIMS) techniques. Result

Effect of oxide thickness on the capacit
Effect of oxide thickness on the capacitance and conductance characteristics of MOS structures
✍ N. Tuğluoğlu; S. Karadeniz; A. Birkan SelΓ§uk; S. Bilge Ocak πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 245 KB

In this work, the investigation of the interface states density and series resistance from capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics in Au/SnO 2 /n-Si (MOS) structures prepared at various SnO 2 layer thicknesses by spray deposition technique have been reported. It is fa