The Effect of Sulfur Passivation and Rapid Thermal Annealing on the Properties of InAs MOS Structures with the Oxide Layer Deposited by Reactive Sputtering

✍ Scribed by Eftekhari, G.

• Publisher: John Wiley and Sons
• Year: 1997
• Tongue: English
• Weight: 186 KB
• Volume: 161
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(199706)161:2<571::aid-pssa571>3.0.co;2-p