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Effect of n+-polycrystalline silicon gate rapid thermal annealing on the electrical properties of the gate oxide

โœ Scribed by J. Korec; A. Steffen; G.K. McGinty; P. Balk


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
415 KB
Volume
162
Category
Article
ISSN
0040-6090

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