✦ LIBER ✦
Effect of annealing and plasma precleaning on the electrical properties of N2O/SiH4 PECVD oxide as gate material in MOSFETs and CCDs
✍ Scribed by R.K. Chanana; R. Dwivedi; S.K. Srivastava
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 678 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0038-1101
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