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Investigation on deep level defects in rapid thermal annealed undoped n-type InP

✍ Scribed by V. Janardhanam; A. Ashok Kumar; V. Rajagopal Reddy; P. Narasimha Reddy

Publisher: Springer US
Year: 2009
Tongue: English
Weight: 250 KB
Volume: 21
Category: Article
ISSN: 0957-4522
DOI: 10.1007/s10854-009-9906-3

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## Abstract The effects of rapid thermal annealing on the electrical and structural properties of Pd/Au Schottky contacts to n‐type InP(111) have been investigated by current–voltage (__I__ –__V__), capacitance–voltage (__C__ –__V__) and X‐ray diffraction (XRD) measurements. The barrier height of t