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Effects of rapid thermal processing on oxide precipitation in conventional and nitrogen-doped Czochralski silicon

✍ Scribed by Ma, Xiangyang ;Fu, Liming ;Tian, Daxi ;Cui, Can ;Yang, Deren

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
188 KB
Volume
203
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

In this paper, the effects of vacancies introduced by rapid thermal processing (RTP) on nucleation and growth of oxide precipitates in Czochralski (Cz) silicon are elucidated. Moreover, the nitrogen and vacancy enhancement roles in oxide precipitation are differentiated through designing specific annealing schemes. Furthermore, it is pointed out that the RTP‐based internal gettering process for a nitrogen‐doped Cz silicon wafer should be different from that for a conventional Cz silicon wafer in order to strengthen the intrinsic gettering capability. (Β© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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