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Morphology of oxygen precipitates in silicon wafers pre-treated by rapid thermal annealing

โœ Scribed by Kot, D.; Kissinger, G.; Schubert, M. A.; Sattler, A.

Book ID
121795056
Publisher
American Institute of Physics
Year
2014
Tongue
English
Weight
763 KB
Volume
104
Category
Article
ISSN
0003-6951

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โœ Xuegong Yu; Deren Yang; Xiangyang Ma; Duanlin Que ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 321 KB

The effect of rapid thermal process (RTP) on the oxygen precipitation and on the denuded zone (DZ) formation in nitrogen-doped Czochralski (NCZ) silicon wafers has been investigated. The DZ can be formed at the surface of NCZ wafers subjected to RTP annealing. However, the oxygen precipitation and b