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Spatial variations in oxygen precipitation in silicon after high temperature rapid thermal annealing

✍ Scribed by Pagani, M.; Falster, R. J.; Fisher, G. R.; Ferrero, G. C.; Olmo, M.

Book ID
121800635
Publisher
American Institute of Physics
Year
1997
Tongue
English
Weight
308 KB
Volume
70
Category
Article
ISSN
0003-6951

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Oxygen precipitation (OP) behaviors in heavily arsenic-doped Czochralski silicon wafers without and with prior rapid thermal processing at 1100-1250 1C, subjected to subsequent two-step anneal of 450, 650 and 800 1C/4 h+1000 1C/16 h, have been investigated. It is found that the prior RTP at 1250 1C