๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Oxygen precipitation in heavily phosphorus-doped silicon wafer annealed at high temperatures

โœ Scribed by Yuheng Zeng; Deren Yang; Xiangyang Ma; Jiahe Chen; Duanlin Que


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
612 KB
Volume
159-160
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


DLTS study of oxygen precipitates in sil
โœ I.V. Antonova; A. Misiuk; V.P. Popov; L.I. Fedina; S.S. Shaimeev ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 468 KB

The evolution of oxygen precipitates (OPs) created at 900-1000 K in Si-Cz with initial oxygen concentration 8 ร— 1017 cm -3 was studied by DLTS technique. The samples were subjected to high pressure (HP) treatment up to 1.3 GPa at high temperature (HT, 1230-1550 K) which caused a partial dissolution

Study on preventing segregation of erbiu
โœ Xifeng Qin; Ming Chen; Xuelin Wang; Gang Fu; Yi Liang; Shaomei Zhang ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 251 KB

The damage produced by implantation of Er ions of 400 keV at a fluence of 5 ร‚ 10 15 ions/cm 2 in silicon was investigated by Rutherford backscattering spectrometry with 2.1 MeV He 2+ ions with multiple scattering models. It was found that the damage around the Si surface was almost removed after ann