✦ LIBER ✦
Study on preventing segregation of erbium atoms to a silicon surface by annealing in oxygen atmosphere at high temperature
✍ Scribed by Xifeng Qin; Ming Chen; Xuelin Wang; Gang Fu; Yi Liang; Shaomei Zhang
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 251 KB
- Volume
- 268
- Category
- Article
- ISSN
- 0168-583X
No coin nor oath required. For personal study only.
✦ Synopsis
The damage produced by implantation of Er ions of 400 keV at a fluence of 5 Â 10 15 ions/cm 2 in silicon was investigated by Rutherford backscattering spectrometry with 2.1 MeV He 2+ ions with multiple scattering models. It was found that the damage around the Si surface was almost removed after annealing in oxygen and nitrogen atmospheres successively at 1000 °C, and only a small portion of the Er atoms segregated to the silicon surface. Most of the Er atoms diffused to deeper depths because of the affinity of Er for oxygen.
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