Oxygen precipitation (OP) behaviors in heavily arsenic-doped Czochralski silicon wafers without and with prior rapid thermal processing at 1100-1250 1C, subjected to subsequent two-step anneal of 450, 650 and 800 1C/4 h+1000 1C/16 h, have been investigated. It is found that the prior RTP at 1250 1C
โฆ LIBER โฆ
Oxide precipitation behavior in heavily doped silicon wafer after rapid thermal process
โ Scribed by Shilong Sun; Weizhong Sun; Qiuyan Hao; Lijian Wang; Xiaoyun Teng; Caichi Liu; Yuesheng Xu
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 391 KB
- Volume
- 9
- Category
- Article
- ISSN
- 1369-8001
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