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Effect of proton implantation at variable temperatures and doses on the semi-insulating GaAs

✍ Scribed by S. Ahmed; B.J. Sealy; R. Gwilliam


Book ID
114167252
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
103 KB
Volume
206
Category
Article
ISSN
0168-583X

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The effect of implantation temperature and oxygen dose on the structure of as-implanted separation by implantation of oxygen (SIMOX) wafers was studied by means of Rutherford backscattering spectrometry and ion channelling, secondary ion mass spectrometry and cross-sectional transmission electron mi