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Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si

✍ Scribed by Lourdes Pelaz; Luis A Marques; George H Gilmer; Martin Jaraiz; Juan Barbolla


Book ID
114164704
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
133 KB
Volume
180
Category
Article
ISSN
0168-583X

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