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The effect of dose rate and implant temperature on transient enhanced diffusion in boron implanted silicon

โœ Scribed by K. S. Jones; J. Chen; S. Bharatan; J. Jackson; L. Rubin; M. Puga-Lambers; D. Venables

Book ID
107457476
Publisher
Springer US
Year
1997
Tongue
English
Weight
127 KB
Volume
26
Category
Article
ISSN
0361-5235

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The effect of implantation temperature and oxygen dose on the structure of as-implanted separation by implantation of oxygen (SIMOX) wafers was studied by means of Rutherford backscattering spectrometry and ion channelling, secondary ion mass spectrometry and cross-sectional transmission electron mi