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Kinetics of silicon amorphization by N+ implantation: Dose rate and substrate temperature effects

โœ Scribed by A. Claverie; A. Roumili; N. Gessinn; J. Beauvillain


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
594 KB
Volume
4
Category
Article
ISSN
0921-5107

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The effect of implantation temperature and oxygen dose on the structure of as-implanted separation by implantation of oxygen (SIMOX) wafers was studied by means of Rutherford backscattering spectrometry and ion channelling, secondary ion mass spectrometry and cross-sectional transmission electron mi