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Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion

✍ Scribed by A. Claverie; L.F. Giles; M. Omri; B. de Mauduit; G. Ben Assayag; D. Mathiot

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Thermal evolution of extended defects in

✍ Alain Claverie; Benjamin Colombeau; Gérard Ben Assayag; Caroline Bonafos; Filade 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 651 KB

The effect of TEM sample thickness on nu

✍ Jing-Hong Li; Mark E. Law; Craig Jasper; Kevin S. Jones 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 728 KB

Dose and implantation temperature influe

✍ F Schiettekatte; S Roorda; R Poirier; M.O Fortin; S Chazal; R Héliou 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 484 KB

Atomistic modeling of the effects of dos

✍ Lourdes Pelaz; Luis A Marques; George H Gilmer; Martin Jaraiz; Juan Barbolla 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 133 KB