𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Thermal evolution of extended defects in implanted Si:: impact on dopant diffusion

✍ Scribed by Alain Claverie; Benjamin Colombeau; Gérard Ben Assayag; Caroline Bonafos; Filadelfo Cristiano; Mourad Omri; Bernadette de Mauduit

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
651 KB
Volume
3
Category
Article
ISSN
1369-8001

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Modeling of extrinsic extended defect ev
Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing
✍ C.J. Ortiz; F. Cristiano; B. Colombeau; A. Claverie; N.E.B. Cowern 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 175 KB

A physically motivated model that accounts for the spatial and temporal evolution of extended defect distribution in ion-implanted Si is presented. Free physical parameters are extracted from experimental data and by means of a genetic algorithm (GA). Transmission electron microscopy (TEM) data and