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The influence of implanted dopants on stresses and diffusion processes in NiO films during thermal oxidation of Ni

โœ Scribed by D. Loison; J.C. Pivin; J. Chaumont; C. Roques-Carmes

Publisher
Elsevier Science
Year
1983
Weight
516 KB
Volume
209-210
Category
Article
ISSN
0167-5087

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โœ P. Poole; L.L. Shreir ๐Ÿ“‚ Article ๐Ÿ“… 1968 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 520 KB

The magnitude of the stress in thin oxide lilms on Cu and Fe has been determined using a sensitive stressometer and measuring the relaxation of stress during electrometric reduction of the oxide. The method has the advantage that both the stress and thickness of oxide can be measured simultaneously.