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Evolution of end-of-range defects in Si after Xe implantation studied by grazing incidence diffuse X-ray scattering

✍ Scribed by L. Capello; T.H. Metzger


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
305 KB
Volume
114-115
Category
Article
ISSN
0921-5107

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