The paper presents the investigation of the effect of the process parameters on the structure of hydrogenated amorphous carbon (a-C:H) films deposited on Si(100) substrate by electron cyclotron resonance microwave plasma chemical vapor deposition method (ECR-PCVD). The investigation is based on an o
โฆ LIBER โฆ
Effect of process parameters on the properties of electron cyclotron resonance plasma deposited silicon-oxynitride
โ Scribed by Pavel V. Bulkin; Pieter L. Swart; Beatrys M. Lacquet
- Book ID
- 115990393
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 325 KB
- Volume
- 187
- Category
- Article
- ISSN
- 0022-3093
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