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Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

✍ Scribed by An, Joon Ho; Lee, Gi Sub; Lee, Won Jae; Shin, Byoung Chul; Seo, Jung Doo; Ku, Kap Ryeol; Seo, Heon Decok; Jeong, Hae Do


Book ID
120658858
Publisher
Trans Tech Publications, Ltd.
Year
2008
Tongue
English
Weight
605 KB
Volume
600-603
Category
Article
ISSN
1662-9752

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Effect of mechanical process parameters
✍ Woong Cho; Yoomin Ahn; Chang-Wook Baek; Yong-Kweon Kim πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 485 KB

The effects of polishing pressure and abrasive on the chemical mechanical polishing of blanket and patterned aluminum thin films were investigated. The CMP process experiments were conducted using a soft pad and slurry mainly composed of acid solution and Al O abrasive. The result of the blanket fil