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Effect of process parameters on material removal rate in chemical mechanical polishing of Si(1 0 0)

✍ Scribed by Markus Forsberg


Book ID
108207390
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
172 KB
Volume
77
Category
Article
ISSN
0167-9317

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Adding a phosphorus-containing species during chemical vapor deposition of Ge islands on Si(0 0 1) modiΓΏes the island sizes and shapes, primarily by changing the surface energies and the relative surface energies of di erent surface facets. Three distinct island shapes occur, but the island types an