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Effect of low k dielectrics on electromigration reliability for Cu interconnects

✍ Scribed by Paul S. Ho; Ki-Don Lee; Sean Yoon; Xia Lu; Ennis T. Ogawa

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
543 KB
Volume
7
Category
Article
ISSN
1369-8001

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Electromigration and electrical breakdown are two of the most important concerns in the reliability of modern electronic devices. The electromigration lifetimes and electrical breakdown field (E BD ) in single damascene copper lines/ porous polyarylene ether (PAE) dielectric with different diffusion